FDC608PZ Series

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ

Part	Technology	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDC608PZ-F171	MOSFET (Metal Oxide)	12 V	P-Channel	-55 °C	150 °C	Surface Mount	2.5 V 4.5 V	SOT-23-6 Thin TSOT-23-6	SuperSOT™-6	1330 pF	5.8 A	1.5 V	23 nC	20 V	30 mOhm

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ

Key Features

-5.8A, -20V, RDS(on)= 30mΩ @ VGS= -4.5V RDS(on)= 43mΩ @ VGS= -2.5V

• Low gate charge

• High performance trench technology for extremely low RDS(on)

• SuperSOT™¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)

Description

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.