NXH350N100H4Q2 Series

SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode

Catalog

SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	Input Capacitance (Cies) @ Vce	IGBT Type	Supplier Device Package	Configuration	Vce(on) (Max) @ Vge, Ic	NTC Thermistor
ON Semiconductor NXH350N100H4Q2F2SG	Chassis Mount	303 A	1000 V	Standard	150 °C	-40 °C	1 mA	Module	592 W	24.146 nF	Trench Field Stop	42-PIM/Q2PACK (93x47)	Three Level Inverter	1.8 V

Catalog

SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode

Key Features

• Module with low thermal impedance baseplate

• Solder and press-fit options

• 1000V low VCE(SAT) IGBTs and 1200V SiC diode optimized combination for DC-AC conversion

Description

The NXH350N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V SiC diodes for the neutral point clamps, 350 A, 1000 V IGBTs for the outer IGBTs and 300 A, 1000 V IGBTs for the inner IGBTs. The inverse diodes for the IGBTs are specified at 170 A for switching. An on-board thermistor is included.