NXH50M65L4Q1 Series

IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode

Catalog

IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode

Part	Input	Input Capacitance (Cies) @ Vce	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	NTC Thermistor	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector Cutoff (Max) [Max]	Configuration	Mounting Type	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	IGBT Type	Operating Temperature
ON Semiconductor NXH50M65L4Q1PTG	Standard	3.137 nF	86 W	2.22 V		650 V	Module	300 µA	Full Bridge	Chassis Mount	47	53-PIM/Q2PACK	93	Trench Field Stop	175 °C
ON Semiconductor NXH50M65L4Q1SG	Standard	3.137 nF	86 W	2.22 V		650 V	Module	300 µA	Full Bridge	Chassis Mount	47	56-PIM	93	Trench Field Stop	175 °C

Catalog

IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode

Key Features

• Fast switching FieldStop 4 Trench IGBTs with low VCE(SAT) and low switching losses

• Module solution

• Three level H6.5 topology

• Low inductive layout in module

• Solder pins

Description

The NXH50M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 50 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.