NXH40B120MNQ0 Series

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

Catalog

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Input Capacitance (Cies) @ Vce	Configuration	Package / Case	Power - Max [Max]	Mounting Type	NTC Thermistor	Input
ON Semiconductor NXH40B120MNQ0SNG	-40 C	175 °C	32.5	22-PIM/Q0BOOST	55	3.227 nF	Dual Boost Chopper	Module	118 W	Chassis Mount		Standard

Catalog

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

Key Features

• SiC MOSFET Specification: 40 mΩ 1200 V

• 50 A / 1200 V Bypass Diodes

• SiC Rectifier Specification: VF = 1.4 V

• Solderable Pins

• Thermistor

Description

The NXH40B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 40mohm/1200V SiC MOSFETs and two 40A/1200V SiC diodes. Two additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.