NXH40B120MNQ1 Series

Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

Catalog

Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

Part	Power - Max [Max]	Package / Case	Input	Mounting Type	Configuration	NTC Thermistor	Supplier Device Package	Input Capacitance (Cies) @ Vce	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NXH40B120MNQ1SNG	156 W	Module	Standard	Chassis Mount	Dual Triple		32-PIM (71x37.4)	3.227 nF	-40 C	175 °C

Catalog

Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

Key Features

• SiC MOSFET Specification: 40 mΩ 1200 V

• 50 A / 1200 V Bypass Diodes

• SiC Rectifier Specification: VF = 1.4 V

• Solderable pins

• Thermistor

Description

The NXH40B120MNQ1 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of three 40mohm/1200V SiC MOSFETs and three 40A/1200V SiC diodes. Three additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.