NXH450B100H4Q2 Series

Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode

Catalog

Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode

Part	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Input	Mounting Type	Input Capacitance (Cies) @ Vce	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Configuration	Supplier Device Package [x]	Supplier Device Package [y]	Supplier Device Package	Power - Max [Max]	NTC Thermistor
ON Semiconductor NXH450B100H4Q2F2PG	2.25 V	101 A	Standard	Chassis Mount	9.342 nF	150 °C	-40 °C	Module	1000 V	2 Independent	93	47	56-PIM	234 W

Catalog

Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode

Key Features

• Module with low thermal impedance baseplate

• Solder and press-fit options

• 1000V low VCE(sat) fast switching IGBTs and 1200V SiC diode optimized combination for solar boost stage

Description

The NXH450B100H4Q2 is a three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.