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Product families from NovuSem
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
Parts that are not part of a series
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Parts from NovuSem that are not part of a series
| Part Information | Pricing (lowest) | Voltage - Forward (Vf) (Max) | Mounting Type | Technology | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Package / Case | Reverse Recovery Time (trr) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Capacitance | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Vgs (Max) Negative | Vgs (Max) Positive | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Power Dissipation (Max) | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NovuSem SIC SCHOTTKY 1200V 10A TO220- 2L | Sign in to see pricing | 1.6 V | Through Hole | SiC (Silicon Carbide) Schottky | 10 A | 1200 V | 35 µA | TO-220-2 | 0 ns | 500 mA | No Recovery Time | 500 mA, 500 mA | 175 °C | -55 °C | TO-220-2L | 670 pF | — | — | — | — | — | — | — | — | — | — | — | — | — |
 NovuSem DIODE SIL CARB 1200V 20A TO2472L | Sign in to see pricing | 1.6 V | Through Hole | SiC (Silicon Carbide) Schottky | 20 A | 1200 V | 50 µA | TO-247-2 | 0 ns | 500 mA | No Recovery Time | 500 mA, 500 mA | 175 °C | -55 °C | TO-247-2L | 1371 pF | — | — | — | — | — | — | — | — | — | — | — | — | — |
NovuSem DIODE SIL CARB 1200V 30A TO2472L | Sign in to see pricing | 1.6 V | Through Hole | SiC (Silicon Carbide) Schottky | 30 A | 1200 V | 85 µA | TO-247-2 | 0 ns | 500 mA | No Recovery Time | 500 mA, 500 mA | 175 °C | -55 °C | TO-247-2L | 2125 pF | — | — | — | — | — | — | — | — | — | — | — | — | — |
 NovuSem SIC MOS WAFER 12MOHM 1200V | Sign in to see pricing | — | — | SiCFET (Silicon Carbide) | — | — | — | — | — | — | — | — | — | — | — | — | 214 A | 20 V | — | — | — | — | — | — | — | — | — | — | — |
 NovuSem SIC MOS WAFER 12MOHM 1200V NIPDA | Sign in to see pricing | — | Surface Mount | SiCFET (Silicon Carbide) | — | — | — | Die | — | — | — | — | — | — | Wafer | — | 214 A | 20 V | 1200 V | 3.5 V | 8330 pF | 12 mOhm | -8 V | 22 V | — | — | — | — | — |
 NovuSem SIC MOSFET N 1200V 40MOHM 76A 3 | Sign in to see pricing | — | Through Hole | SiCFET (Silicon Carbide) | — | — | — | TO-247-3 | — | — | — | — | — | — | TO-247-3L | — | 76 A | 20 V | 1200 V | 2.8 V | 2534 pF | 40 mOhm | -5 V | 20 V | -55 °C | 175 °C | N-Channel | 375 W | — |
 NovuSem SIC MOSFET N 1200V 40MOHM 75A 4 | Sign in to see pricing | — | Through Hole | SiCFET (Silicon Carbide) | — | — | — | TO-247-4 | — | — | — | — | — | — | TO-247-4L | — | 75 A | 20 V | 1200 V | 2.8 V | 2534 pF | 40 mOhm | -5 V | 20 V | -55 °C | 175 °C | N-Channel | 366 W | — |
 NovuSem SIC MOSFET N 1200V 75MOHM 47A 4 | Sign in to see pricing | — | Through Hole | SiCFET (Silicon Carbide) | — | — | — | TO-247-4 | — | — | — | — | — | — | TO-247-4L | — | 47 A | 20 V | 1200 V | 2.8 V | 1450 pF | 75 mOhm | -5 V | 20 V | -55 °C | 175 °C | N-Channel | 288 W | — |
 NovuSem SIC MOSFET N 1200V 75MOHM 46A 7 | Sign in to see pricing | — | Surface Mount | SiCFET (Silicon Carbide) | — | — | — | — | — | — | — | — | — | — | DPak, TO-263-7L | — | 46 A | 18 V | 1200 V | 2.3 V | 1402 pF | 75 mOhm | -5 V | 18 V | -55 °C | 150 °C | N-Channel | 240 W | 7 Leads |