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NC1D120C20KTNG
Discrete Semiconductor Products

NC1D120C20KTNG

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NovuSem

DIODE SIL CARB 1200V 20A TO2472L

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NC1D120C20KTNG
Discrete Semiconductor Products

NC1D120C20KTNG

Active
NovuSem

DIODE SIL CARB 1200V 20A TO2472L

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNC1D120C20KTNG
Capacitance @ Vr, F1371 pF
Current - Reverse Leakage @ Vr50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-247-2
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-247-2L
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 15000$ 7.49
Tube 200$ 7.85

Description

General part information

NC1D120C20KTNG

DIODE SIL CARB 1200V 20A TO2472L

Documents

Technical documentation and resources