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NC1D120C20KTNG
Discrete Semiconductor Products

NC1D120C20KTNG

Active
NovuSem

DIODE SIL CARB 1200V 20A TO2472L

NC1D120C20KTNG
Discrete Semiconductor Products

NC1D120C20KTNG

Active
NovuSem

DIODE SIL CARB 1200V 20A TO2472L

Technical Specifications

Parameters and characteristics for this part

SpecificationNC1D120C20KTNG
Capacitance1371 pF
Current - Average Rectified (Io)20 A
Current - Reverse Leakage50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2L
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 15000$ 7.4930d+
Tube 200$ 7.8530d+

CAD

3D models and CAD resources for this part

Description

General part information

NC1D120C20KTNG

DIODE SIL CARB 1200V 20A TO2472L

Documents

Technical documentation and resources