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NC1M120C40GTNG
Discrete Semiconductor Products

NC1M120C40GTNG

Active
NovuSem

SIC MOSFET N 1200V 40MOHM 76A 3

NC1M120C40GTNG
Discrete Semiconductor Products

NC1M120C40GTNG

Active
NovuSem

SIC MOSFET N 1200V 40MOHM 76A 3

Technical Specifications

Parameters and characteristics for this part

SpecificationNC1M120C40GTNG
Current - Continuous Drain (Id) (Tc)76 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)20 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)2534 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3L
Power Dissipation (Max)375 W
Rds On (Max)40 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive20 V
Vgs(th) (Max)2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 15000$ 21.6830d+
Tube 50$ 21.8530d+

CAD

3D models and CAD resources for this part

Description

General part information

NC1M120C40GTNG

N-Channel 1200 V 76A (Tc) 375W (Ta) Through Hole TO-247-3L

Documents

Technical documentation and resources