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NC1M120C75RRNG
Discrete Semiconductor Products

NC1M120C75RRNG

Active
NovuSem

SIC MOSFET N 1200V 75MOHM 46A 7

NC1M120C75RRNG
Discrete Semiconductor Products

NC1M120C75RRNG

Active
NovuSem

SIC MOSFET N 1200V 75MOHM 46A 7

Technical Specifications

Parameters and characteristics for this part

SpecificationNC1M120C75RRNG
Current - Continuous Drain (Id) (Tc)46 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)1402 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameTO-263-7L, DPak
Power Dissipation (Max)240 W
Rds On (Max)75 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive18 V
Vgs(th) (Max)2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 15000$ 12.9830d+
Tape & Reel (TR) 50$ 13.8530d+

CAD

3D models and CAD resources for this part

Description

General part information

NC1M120C75RRNG

N-Channel 1200 V 46A (Tc) 240W (Ta) Surface Mount TO-263-7L

Documents

Technical documentation and resources