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NC1M120C12WCNG
Discrete Semiconductor Products

NC1M120C12WCNG

Active
NovuSem

SIC MOS WAFER 12MOHM 1200V

NC1M120C12WCNG
Discrete Semiconductor Products

NC1M120C12WCNG

Active
NovuSem

SIC MOS WAFER 12MOHM 1200V

Technical Specifications

Parameters and characteristics for this part

SpecificationNC1M120C12WCNG
Current - Continuous Drain (Id) (Tc)214 A
Drive Voltage (Max Rds On, Min Rds On)20 V
TechnologySiCFET (Silicon Carbide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTray 218$ 48.98<4d

CAD

3D models and CAD resources for this part

Description

General part information

NC1M120C12WCNG

SIC MOS WAFER 12MOHM 1200V

Documents

Technical documentation and resources