Technical Specifications
Parameters and characteristics for this part
| Specification | NC1M120C12WDCU |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 214 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| Input Capacitance (Ciss) (Max) | 8330 pF |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Package Name | Wafer |
| Rds On (Max) | 12 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 218 | $ 66.88 | <4d |
CAD
3D models and CAD resources for this part
Description
General part information
NC1M120C12WDCU
SIC MOS WAFER 12MOHM 1200V NIPDA
Documents
Technical documentation and resources