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NC1M120C40HTNG
Discrete Semiconductor Products

NC1M120C40HTNG

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NovuSem

SIC MOSFET N 1200V 40MOHM 75A 4

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NC1M120C40HTNG
Discrete Semiconductor Products

NC1M120C40HTNG

Active
NovuSem

SIC MOSFET N 1200V 40MOHM 75A 4

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNC1M120C40HTNG
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)1.2 kV
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]2534 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max)366 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageTO-247-4L
Vgs (Max) [Max]20 V, -5 V
Vgs(th) (Max) @ Id2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 15000$ 21.68

Description

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NC1M120C40HTNG

SIC MOSFET N 1200V 40MOHM 75A 4

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