Technical Specifications
Parameters and characteristics for this part
| Specification | NC1M120C40HTNG |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 75 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 2534 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4L |
| Power Dissipation (Max) | 366 W |
| Rds On (Max) | 40 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 15000 | $ 21.68 | 30d+ |
CAD
3D models and CAD resources for this part
Description
General part information
NC1M120C40HTNG
SIC MOSFET N 1200V 40MOHM 75A 4
Documents
Technical documentation and resources