PSMN4R0 Series

Catalog

PSMN4R0-60YS - N-CHANNEL LFPAK 60 V, 4.0 MΩ STANDARD LEVEL FET@EN-US SOIC 4-PIN

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PSMN4R0-60YS,115	3501 pF	LFPAK56 Power-SO8	74 A	60 V	N-Channel	20 V	130 W	10 V	SC-100 SOT-669	56 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)	4 mOhm	Surface Mount
Freescale Semiconductor - NXP PSMN4R0-40YS,115	2410 pF	LFPAK56 Power-SO8	100 A	40 V	N-Channel	20 V	106 W	10 V	SC-100 SOT-669		-55 °C	175 ░C	MOSFET (Metal Oxide)		Surface Mount	38 nC	4.2 mOhm
Freescale Semiconductor - NXP PSMN4R0-30YL,115		LFPAK56 Power-SO8	100 A	30 V	N-Channel	20 V		4.5 V 10 V	SC-100 SOT-669		-55 °C	175 ░C	MOSFET (Metal Oxide)	4 mOhm	Surface Mount	36.6 nC		2.15 V
Freescale Semiconductor - NXP PSMN4R0-25YLC,115	1407 pF	LFPAK56 Power-SO8	84 A	25 V	N-Channel	20 V		4.5 V 10 V	SC-100 SOT-669		-55 °C	175 ░C	MOSFET (Metal Oxide)		Surface Mount	22.8 nC	4.5 mOhm		61 W
Freescale Semiconductor - NXP PSMN4R0-30YLDX	1272 pF	LFPAK56 Power-SO8	95 A	30 V	N-Channel	20 V	64 W	4.5 V 10 V	SC-100 SOT-669	19.4 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)		Surface Mount		4 mOhm			2.2 V