PSMN3R5 Series

Catalog

N-CHANNEL 40 V, 3.5 MΩ, 120 A STANDARD LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PSMN3R5-40YSDX	120 A	LFPAK56 Power-SO8	Schottky Diode (Body)	10 V	3.5 mOhm	Surface Mount	19 nC	MOSFET (Metal Oxide)	3245 pF	N-Channel	-55 °C	175 ░C	40 V	SC-100 SOT-669	115 W	20 V	3.6 V
Freescale Semiconductor - NXP PSMN3R5-25MLDX	70 A	LFPAK33	Schottky Diode (Body)	4.5 V 10 V		Surface Mount	18.9 nC	MOSFET (Metal Oxide)	1334 pF	N-Channel	-55 °C	175 ░C	25 V		65 W	20 V	2.2 V	3.72 mOhm
Freescale Semiconductor - NXP PSMN3R5-80PS,127	120 A	TO-220AB		10 V	3.5 mOhm	Through Hole	139 nC	MOSFET (Metal Oxide)	9961 pF	N-Channel	-55 °C	175 ░C	80 V	TO-220-3	338 W	20 V
Freescale Semiconductor - NXP PSMN3R5-30YL,115	100 A	LFPAK56 Power-SO8		4.5 V 10 V		Surface Mount		MOSFET (Metal Oxide)	2458 pF	N-Channel	-55 °C	175 ░C	30 V	SC-100 SOT-669		20 V		3.5 mOhm	41 nC	74 W	2.15 V