PSMN1R7-40YLD Series

N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Catalog

N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Feature	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN1R7-40YLDX	109 nC	LFPAK56 Power-SO8	175 °C	-55 °C	Surface Mount	N-Channel	MOSFET (Metal Oxide)	200 A	1.8 mOhm	40 V	20 V	Schottky Diode (Body)	SC-100 SOT-669	2.05 V	7966 pF	4.5 V 10 V

Catalog

N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Description

200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.