PSMN1R7-40YLB Series

N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Catalog

N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	FET Feature	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)
Nexperia USA Inc. PSMN1R7-40YLBX	SC-100 SOT-669	40 V	MOSFET (Metal Oxide)	Schottky Diode (Body)	200 A	175 °C	-55 °C	Surface Mount	2.05 V	111 nC	N-Channel	LFPAK56 Power-SO8	4.5 V 10 V	8138 pF	1.8 mOhm	20 V

Catalog

N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Description

200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.