PSMN1R8-80SSE Series

N-channel 80 V, 1.9mOhm ASFET with enhanced SOA in LFPAK88

Catalog

N-channel 80 V, 1.9mOhm ASFET with enhanced SOA in LFPAK88

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. PSMN1R8-80SSEJ	500 W	34730 pF	408 nC	Surface Mount	80 V	SOT-1235	10 V	N-Channel	MOSFET (Metal Oxide)	20 V	LFPAK88 (SOT1235)	1.9 mOhm	175 °C	-55 °C	2.2 V	286 A

Catalog

N-channel 80 V, 1.9mOhm ASFET with enhanced SOA in LFPAK88

Description

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R8-80SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.