PSMN1R5-40YSD Series

N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Catalog

N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	FET Feature
Nexperia USA Inc. PSMN1R5-40YSDX	7752 pF	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	N-Channel	240 A	40 V	SC-100 SOT-669	10 V	99 nC	1.5 mOhm	175 °C	-55 °C	20 V	3.6 V	Surface Mount	Schottky Diode (Body)

Catalog

N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Description

240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.