PSMN1R4-100CSE Series

N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

Catalog

N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

Part	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [x]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. PSMN1R4-100CSEJ	100 V	MOSFET (Metal Oxide)	3.6 V	175 °C	-55 °C	CCPAK1212i	Surface Mount	26023 pF	935 W	10 V	12-BESOP Exposed Pad	9.4 mm	0.37 in	366 nC	N-Channel	20 V	340 A

Catalog

N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

Description

N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100CSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).