PSMN1R4-100ASE Series

N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Catalog

N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Part	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [x]	Package / Case [x]	FET Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)
Nexperia USA Inc. PSMN1R4-100ASEJ	MOSFET (Metal Oxide)	Surface Mount	340 A	10 V	26023 pF	366 nC	935 W	3.6 V	100 V	12-BESOP Exposed Pad	9.4 mm	0.37 in	N-Channel	CCPAK1212	175 °C	-55 °C	20 V

Catalog

N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Description

N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).