PSMN1R2 Series

Catalog

N-CHANNEL 30 V 1.25MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

Part	FET Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PSMN1R2-30YLC,115	N-Channel	30 V	MOSFET (Metal Oxide)	1.25 mOhm	215 W	SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	5093 pF	20 V	100 A	78 nC	Surface Mount	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN1R2-25YLDX	N-Channel	25 V	MOSFET (Metal Oxide)	1.2 mOhm	172 W	SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	4327 pF	20 V	100 A		Surface Mount	-55 °C	175 ░C	Schottky Diode (Body)	60.3 nC	2.2 V
Freescale Semiconductor - NXP PSMN1R2-25YLC,115	N-Channel	25 V	MOSFET (Metal Oxide)	1.3 mOhm		SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	4173 pF	20 V	100 A		Surface Mount	-55 °C	175 ░C		66 nC		179 W
Freescale Semiconductor - NXP PSMN1R2-30YLDX	N-Channel	30 V	MOSFET (Metal Oxide)	1.24 mOhm		SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	4616 pF	20 V	100 A	68 nC	Surface Mount	-55 °C	175 ░C			2.2 V