PSMN1R2-80CSE Series

N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

Catalog

N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Package / Case [x]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology
Nexperia USA Inc. PSMN1R2-80CSEJ	375 A	N-Channel	3.6 V	175 °C	-55 °C	CCPAK1212i	80 V	Surface Mount	12-BESOP Exposed Pad	9.4 mm	0.37 in	350 nC	20 V	26187 pF	1.18 mOhm	10 V	935 W	MOSFET (Metal Oxide)

Catalog

N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

Description

N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212i).