NGW40T65M3DFP650 V, 40 A trench field-stop IGBT with full rated silicon diode | IGBTs | 1 | Active | The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. |
NGW50T65H3DFP650 V, 50 A trench field-stop IGBT with full rated silicon diode | Transistors | 1 | Active | The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. |
NGW50T65M3DFP650 V, 50 A trench field-stop IGBT with full rated silicon diode | Single IGBTs | 1 | Active | The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. |
NGW60T65M3DFP650 V, 60 A trench field-stop IGBT with full rated silicon diode | Single IGBTs | 1 | Active | The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 60 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. |
NGW75T65H3DFIGBT with trench construction, fast recovery diode | Discrete Semiconductor Products | 1 | Active | The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. |
NGW75T65H3DFP650 V, 75 A trench field-stop IGBT with full rated silicon diode | Discrete Semiconductor Products | 1 | Active | The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. |
NGW75T65M3DFP650 V, 75 A trench field-stop IGBT with full rated silicon diode | Transistors | 1 | Active | The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. |
| Discrete Semiconductor Products | 2 | Active | |
| Discrete Semiconductor Products | 1 | Active | |
| Single, Pre-Biased Bipolar Transistors | 1 | Active | |
