NGW75T65H3DF Series

IGBT with trench construction, fast recovery diode

Catalog

IGBT with trench construction, fast recovery diode

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Test Condition	Switching Energy	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	IGBT Type
Nexperia USA Inc. NGW75T65H3DFQ	TO-247-3L	175 °C	-40 °C	165 ns	TO-247-3	Through Hole	80 A	600 W	29 ns 170 ns	300 A	10 Ohm 15 V 75 A 400 V	1.1 mJ 2.9 mJ	2 V	650 V	160 nC	Trench Field Stop

Catalog

IGBT with trench construction, fast recovery diode

Description

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard⁠-⁠switching 650 V, 75 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications.