NGW50T65H3DFP Series

650 V, 50 A trench field-stop IGBT with full rated silicon diode

Catalog

650 V, 50 A trench field-stop IGBT with full rated silicon diode

Part	Current - Collector Pulsed (Icm)	Mounting Type	Test Condition	Switching Energy	Current - Collector (Ic) (Max) [Max]	IGBT Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Vce(on) (Max) @ Vge, Ic	Package / Case	Gate Charge	Reverse Recovery Time (trr)
Nexperia USA Inc. NGW50T65H3DFPQ	200 A	Through Hole	10 Ohm 15 V 50 A 400 V	1.7 mJ 500 µJ	80 A	Trench Field Stop	340 W	650 V	175 °C	-40 °C	TO-247-3L	98 ns	20 ns	2.2 V	TO-247-3	85 nC	145 ns

Catalog

650 V, 50 A trench field-stop IGBT with full rated silicon diode

Description

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.