| Integrated Circuits (ICs) | 1 | Active | The NEX91x30-Q100 is a Low-Dropout (LDO) voltage-tracking regulator with high tracking accuracy of 5 mV (max) and excellent load and line transient responses. It is specifically designed to power off-board sensors in automotive applications such as power train, safety, and Body Control Modules (BCMs). The device supports a wide input voltage range from 4 V to 40 V (up to 45 V transient) to withstand cold-crank and load-dump transient conditions. |
NGB30T65M3DFP650 V, 50 A trench field-stop IGBT with full rated silicon diode | Discrete Semiconductor Products | 1 | Active | The NGB30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGB30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. |
NGD31251D28 A, 5 A dual channel non-isolation gate driver | Integrated Circuits (ICs) | 1 | Active | NGD31251 is a high-frequency, dual channel, non-isolation MOSFET gate driver for high power automotive application. |
NGD4300D4 A peak high-performance dual MOSFET gate driver | Power Management (PMIC) | 1 | Active | The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. |
NGD4300DD4 A peak high-performance dual MOSFET gate driver | Gate Drivers | 1 | Active | The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. |
| Gate Drivers | 1 | Active | The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. |
NGD4300GC4 A peak high-performance dual MOSFET gate driver | Integrated Circuits (ICs) | 1 | Active | The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage. |
NGW30T65M3DFP650 V, 30 A trench field-stop IGBT with full rated silicon diode | IGBTs | 1 | Active | The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. |
NGW40T65H3DFP650 V, 40 A trench field-stop IGBT with full rated silicon diode | Transistors | 1 | Active | The NGW40T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. |
NGW40T65H3DHP650 V, 40 A trench field-stop IGBT with half rated silicon diode | Transistors | 1 | Active | The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. |
