NGW40T65M3DFP Series

650 V, 40 A trench field-stop IGBT with full rated silicon diode

Catalog

650 V, 40 A trench field-stop IGBT with full rated silicon diode

Part	Switching Energy	Gate Charge	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Package / Case	Current - Collector Pulsed (Icm)	Test Condition	Power - Max [Max]
Nexperia USA Inc. NGW40T65M3DFPQ	1.05 mJ 520 µJ	130 nC	TO-247-3L	Through Hole	650 V	72 A	1.9 V	Trench Field Stop	175 °C	-40 °C	55 ns	22 ns 185 ns	TO-247-3	120 A	10 Ohm 15 V 40 A 400 V	283 W

Catalog

650 V, 40 A trench field-stop IGBT with full rated silicon diode

Description

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-⁠circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 40 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications.