NGW75T65H3DFP Series

650 V, 75 A trench field-stop IGBT with full rated silicon diode

Catalog

650 V, 75 A trench field-stop IGBT with full rated silicon diode

Part	Gate Charge	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Package / Case	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Test Condition	Switching Energy
Nexperia USA Inc. NGW75T65H3DFPQ	124 nC	Trench Field Stop	175 °C	-40 °C	122 ns	TO-247-3	2 V	502 W	80 A	TO-247-3L	Through Hole	650 V	30 ns	130 ns	10 Ohm 15 V 75 A 400 V	2.94 mJ 950 µJ

Catalog

650 V, 75 A trench field-stop IGBT with full rated silicon diode

Description

The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard⁠-⁠switching 650 V, 75 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications.