NGW75T65M3DFP Series

650 V, 75 A trench field-stop IGBT with full rated silicon diode

Catalog

650 V, 75 A trench field-stop IGBT with full rated silicon diode

Part	Current - Collector Pulsed (Icm)	IGBT Type	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Gate Charge
Nexperia USA Inc. NGW75T65M3DFPQ	225 A	Trench Field Stop	124 ns	80 A	529 W	175 °C	-40 °C	Through Hole	TO-247-3	44 ns	305 ns	1.39 mJ 2.79 mJ	650 V	10 Ohm 15 V 75 A 400 V	1.8 V	TO-247-3L	262 nC

Catalog

650 V, 75 A trench field-stop IGBT with full rated silicon diode

Description

The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 75 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications.