FR2JA600 V, 2 A fast recovery rectifier in SMA | Discrete Semiconductor Products | 1 | Active | Fast recovery rectifier, encapsulated in an SMA package. |
FR2M1000 V, 2 A fast recovery rectifier in SMB | Discrete Semiconductor Products | 1 | Active | Fast recovery rectifier, encapsulated in an SMB package. |
GAN039-650NBB650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Discrete Semiconductor Products | 1 | Active | The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. |
GAN039-650NTB650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Discrete Semiconductor Products | 1 | Active | The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. |
GAN041-650WSB650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | FETs, MOSFETs | 1 | Active | The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. |
| FETs, MOSFETs | 1 | LTB | |
GAN080650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Single FETs, MOSFETs | 1 | Active | The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. |
GAN111-650WSB650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Transistors | 1 | Active | The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. |
GAN140650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Transistors | 2 | Active | The GAN140-650EBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. |
GAN190650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | FETs, MOSFETs | 2 | Active | The GAN140-650EBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. |
