GAN039-650NBB Series

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

Catalog

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [x]	Package / Case [x]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. GAN039-650NBBHP	26 nC	175 °C	-55 °C	1980 pF	N-Channel	20 V	650 V	12-BESOP Exposed Pad	9.4 mm	0.37 in	Surface Mount	CCPAK1212	250 W	39 mOhm	GaNFET (Gallium Nitride)	4.6 V	10 V	58.5 A

Catalog

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

Description

The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.