GAN140 Series

Catalog

650 V, 140 MOHM GALLIUM NITRIDE

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]
Freescale Semiconductor - NXP GAN140-650EBEZ	125 pF	-55 °C	150 °C	DFN8080-8	17 A	140 mOhm	GaNFET (Gallium Nitride)	6 V	N-Channel	Surface Mount Wettable Flank	650 V	8-VDFN Exposed Pad	2.5 V	113 W	3.5 nC	-1.4 V	7 V
Freescale Semiconductor - NXP GAN140-650FBEZ	125 pF	-55 °C	150 °C	DFN5060-5	17 A	140 mOhm	GaNFET (Gallium Nitride)	6 V	N-Channel	Surface Mount Wettable Flank	650 V	8-PowerVDFN	2.5 V	113 W	3.5 nC	-1.4 V	7 V