GAN190 Series
Manufacturer: Freescale Semiconductor - NXP
Beta
⌘K
650 V, 190 MOHM GALLIUM NITRIDE
| Part | Vgs (Max) [Min] | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | -1.4 V | 7 V | 650 V | GaNFET (Gallium Nitride) | 125 W | DFN5060-5 | N-Channel | 96 pF | 2.8 nC | 11.5 A | 190 mOhm | -55 °C | 150 °C | 6 V | Surface Mount Wettable Flank | 8-PowerVDFN | 2.5 V |