GAN041-650WSB Series

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Catalog

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Part	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Nexperia USA Inc. GAN041-650WSBQ	20 V	N-Channel	1500 pF	187 W	GaNFET (Cascode Gallium Nitride FET)	4.5 V	22 nC	10 V	TO-247-3	41 mOhm	175 °C	-55 °C	Through Hole	650 V	47.2 A	TO-247-3

Catalog

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Description

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.