GAN039-650NTB Series

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

Catalog

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [x]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	FET Type
Nexperia USA Inc. GAN039-650NTBJ	150 °C	-55 °C	58.5 A	10 V	250 W	CCPAK1212i	650 V	GaNFET (Gallium Nitride)	39 mOhm	4.6 V	1980 pF	12-BESOP Exposed Pad	9.4 mm	0.37 in	26 nC	Surface Mount	20 V	N-Channel

Catalog

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

Description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.