GAN111-650WSB Series

650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package

Catalog

650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. GAN111-650WSBQ	TO-247-3	21 A	4.9 nC	336 pF	175 °C	-55 °C	650 V	N-Channel	107 W	114 mOhm	GaNFET (Gallium Nitride)	TO-247-3L	Through Hole	4.8 V	20 V	10 V

Catalog

650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package

Description

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.