What is eGaN technology?

eGaN (enhancement-mode gallium nitride) is EPC's proprietary technology for power transistors that offers superior switching speed, efficiency, and power density compared to traditional silicon MOSFETs.

What applications use EPC GaN transistors?

EPC GaN transistors are used in DC-DC converters, lidar systems, wireless power transfer, class-D audio amplifiers, solar inverters, satellite systems, and autonomous vehicle applications.

Where is EPC headquartered?

Efficient Power Conversion (EPC) is headquartered in El Segundo, California, USA, and was founded in 2007.

How do EPC GaN transistors compare to silicon?

EPC GaN transistors offer faster switching speeds, higher efficiency, greater power density, and smaller size compared to equivalent silicon MOSFETs, enabling more compact and efficient power systems.

EPC | Manufacturer Directory

Efficient Power Conversion (EPC) is the pioneer of enhancement-mode gallium nitride (eGaN) transistors and integrated circuits, enabling superior performance in power conversion applications.

Efficient Power Conversion (EPC) was founded in 2007 and became the first company to introduce enhancement-mode gallium nitride on silicon (eGaN) transistors. Headquartered in El Segundo, California, EPC leads the industry in GaN-based power semiconductors that outperform traditional silicon MOSFETs in efficiency, switching speed, and power density.

EPC's GaN product portfolio enables breakthrough performance in:

High-speed DC-DC power conversion
Lidar systems for autonomous vehicles
Wireless power transfer applications
Class-D audio amplifiers
Solar inverters and renewable energy systems
Satellite and aerospace applications

EPC's eGaN FETs and integrated circuits deliver higher efficiency, smaller size, and lower system costs compared to legacy silicon solutions, making them the preferred choice for next-generation power electronics in automotive, industrial, consumer, and medical applications.

Efficient Power Conversion (EPC) is the pioneer of enhancement-mode gallium nitride (eGaN) transistors and integrated circuits, enabling superior performance in power conversion applications.

GANFET N-CH 100V 36A DIE OUTLINE

Part Information	Pricing (lowest)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Rds On (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Ta)	Vgs (Max) Positive	Technology	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)
EPC2001C EPC GANFET N-CH 100V 36A DIE OUTLINE	Sign in to see pricing Log in Sign up free	100 V	2.5 V	9 nC	Die	-40 °C	150 °C	Die	7 mOhm	N-Channel	5 V	36 A	6 V	GaNFET (Gallium Nitride)	900 pF	Surface Mount	—
EPC2012C EPC GANFET N-CH 200V 5A DIE OUTLINE	Sign in to see pricing Log in Sign up free	200 V	2.5 V	1.3 nC	Die	-40 °C	150 °C	Die	100 mOhm, 100 mOhm	N-Channel	5 V	5 A	6 V	GaNFET (Gallium Nitride)	140 pF	Surface Mount	—
EPC2020 EPC GANFET N-CH 60V 90A DIE	Sign in to see pricing Log in Sign up free	60 V	2.5 V	16 nC	Die	-40 °C	150 °C	Die	2.2 mOhm	N-Channel	5 V	90 A	6 V	GaNFET (Gallium Nitride)	1780 pF	Surface Mount	—
EPC2034C EPC GANFET N-CH 200V 48A DIE	Sign in to see pricing Log in Sign up free	200 V	2.5 V	11 nC	Die	-40 °C	150 °C	Die	8 mOhm	N-Channel	5 V	48 A	6 V	GaNFET (Gallium Nitride)	1140 pF	Surface Mount	—
EPC2045 EPC GANFET N-CH 100V 16A DIE	Sign in to see pricing Log in Sign up free	100 V	2.5 V	6.5 nC	Die	-40 °C	150 °C	Die	7 mOhm	N-Channel	5 V	16 A	6 V	GaNFET (Gallium Nitride)	685 pF	Surface Mount	—
EPC2053 EPC GANFET N-CH 100V 48A DIE	Sign in to see pricing Log in Sign up free	100 V	2.5 V	14.8 nC	Die	-40 °C	150 °C	Die	3.8 mOhm	N-Channel	5 V	48 A	6 V	GaNFET (Gallium Nitride)	1895 pF	Surface Mount	—
EPC2057 EPC TRANS GAN 50V .0085OHM 4LGA	Sign in to see pricing Log in Sign up free	50 V	2.5 V	3.5 nC	Die	-40 °C	150 °C	Die	8.5 mOhm	N-Channel	5 V	9.6 A	6 V	GaNFET (Gallium Nitride)	444 pF	Surface Mount	—
EPC2088 EPC TRANS GAN 100V .0032OHM BMP DIE	Sign in to see pricing Log in Sign up free	100 V	2.5 V	17.8 nC	Die	-40 °C	150 °C	Die	3.2 mOhm	N-Channel	5 V	60 A	6 V	—	2703 pF	Surface Mount	—
EPC2090 EPC 100 V EGAN FET, 5.2 MOHM RDSON,	Sign in to see pricing Log in Sign up free	100 V	2.5 V	9.3 nC	Die	-40 °C	150 °C	Die	5.2 mOhm	N-Channel	5 V	—	6 V	GaNFET (Gallium Nitride)	1328 pF	Surface Mount	46 A
EPC2091 EPC 100 V EGAN FET, 2 MOHM RDSON, 3.	Sign in to see pricing Log in Sign up free	100 V	2.5 V	29 nC	Die	-40 °C	150 °C	Die	2 mOhm	N-Channel	5 V	—	6 V	GaNFET (Gallium Nitride)	4167 pF	Surface Mount	126 A

Series	Category	Parts	Status
-	Evaluation Boards	1	Active
EPC20	Single	46	Active
EPC210	FETs, MOSFETs	12	Active
EPC211	Transistors	3	Active
EPC21601	Integrated Circuits (ICs)	2	Active
EPC21603	Power Management (PMIC)	2	Active
EPC21701	Power Management (PMIC)	1	Active
EPC21702	Laser Drivers	1	Active
EPC2204	FETs, MOSFETs	1	Active
EPC2218	FETs, MOSFETs	2	Active

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