Technical Specifications
Parameters and characteristics for this part
| Specification | EPC2012C |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.3 nC |
| Input Capacitance (Ciss) (Max) | 140 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Die |
| Package Name | Die |
| Rds On (Max) | 100 mOhm, 100 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Positive | 6 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.97 | <4d |
| 10 | $ 2.60 | |||
| 100 | $ 1.82 | |||
| 500 | $ 1.50 | |||
| Tape & Reel (TR) | 2500 | $ 1.26 | <4d | |
| 5000 | $ 1.23 | |||
CAD
3D models and CAD resources for this part
Description
General part information
EPC2012C
GANFET N-CH 200V 5A DIE OUTLINE
Documents
Technical documentation and resources