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EPC2091
Discrete Semiconductor Products

EPC2091

Active
EPC

100 V EGAN FET, 2 MOHM RDSON, 3.

EPC2091
Discrete Semiconductor Products

EPC2091

Active
EPC

100 V EGAN FET, 2 MOHM RDSON, 3.

Technical Specifications

Parameters and characteristics for this part

SpecificationEPC2091
Current - Continuous Drain (Id) (Tc)126 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)29 nC
Input Capacitance (Ciss) (Max)4167 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseDie
Package NameDie
Rds On (Max)2 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Positive6 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 9.73<4d
10$ 6.66
100$ 4.97
Tape & Reel (TR) 1000$ 4.06<4d

CAD

3D models and CAD resources for this part

Description

General part information

EPC2091

100 V EGAN FET, 2 MOHM RDSON, 3.

Documents

Technical documentation and resources