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EPC2001C
Discrete Semiconductor Products

EPC2001C

Active
EPC

GANFET N-CH 100V 36A DIE OUTLINE

EPC2001C
Discrete Semiconductor Products

EPC2001C

Active
EPC

GANFET N-CH 100V 36A DIE OUTLINE

Technical Specifications

Parameters and characteristics for this part

SpecificationEPC2001C
Current - Continuous Drain (Id) (Ta)36 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)9 nC
Input Capacitance (Ciss) (Max)900 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseDie
Package NameDie
Rds On (Max)7 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Positive6 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 6.39<4d
10$ 4.28
100$ 3.08
500$ 2.85
Tape & Reel (TR) 2500$ 2.33<4d

CAD

3D models and CAD resources for this part

Description

General part information

EPC2001C

GANFET N-CH 100V 36A DIE OUTLINE

Documents

Technical documentation and resources