EPC211 Series
Manufacturer: EPC
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GANFET 2N-CH 120V 3.4A DIE
| Part | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) | Package Name | Mounting Type | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) | Gate Charge (Max) | Channel Count | Configuration - Features | Configuration | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 EPC | 80 pF | 3.4 A | Die | Surface Mount | 2.5 V | 120 V | Die | 60 mOhm | 0.8 nC | 2 | Dual | N-Channel | GaNFET (Gallium Nitride) | -40 °C | 150 °C | |
 EPC | 230 pF 590 pF 595 pF | Die | Surface Mount | 2.5 V 2.5 V | 30 V | Die | 19 mOhm | 2.2 nC 2.2 nC 2.2 nC 5.7 nC 5.8 nC | 2 | Half Bridge | N-Channel | GaNFET (Gallium Nitride) | -40 °C | 150 °C | 16 A | |
EPC | 80 pF | 3.4 A | Die | 2.5 V | 120 V | Die | 60 mOhm | 0.8 nC | 2 | Dual | N-Channel | GaNFET (Gallium Nitride) | -40 °C | 150 °C |