EPC211 Series

Manufacturer: EPC

Catalog

GANFET 2N-CH 120V 3.4A DIE

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
EPC EPC2110ENGRT	80 pF	3.4 A	Die	Surface Mount	2.5 V	120 V	Die	60 mOhm	0.8 nC	2 N-Channel (Dual) Common Source	GaNFET (Gallium Nitride)	-40 °C	150 °C
EPC EPC2111	230 pF 230 pF 590 pF 595 pF		Die	Surface Mount	2.5 V 2.5 V	30 V	Die	8 mOhm 19 mOhm		2 N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C	2.2 nC 2.2 nC 5.7 nC 5.8 nC
EPC EPC2110	80 pF	3.4 A	Die		2.5 V	120 V	Die	60 mOhm	0.8 nC	2 N-Channel (Dual) Common Source	GaNFET (Gallium Nitride)	-40 °C	150 °C