EPC20 Series

Manufacturer: EPC

Catalog

GANFET N-CH 40V 33A DIE OUTLINE

Part	FET Type	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
EPC EPC2015	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	33 A	Die	-40 °C	150 °C	40 V	4 mOhm	Die	11.6 nC	1200 pF	2.5 V	-5 V	6 V	5 V
EPC EPC2055	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	29 A	Die	-40 °C	150 °C	40 V	3.6 mOhm 4.2 mOhm	Die	8.5 nC	1111 pF 1254 pF	2.5 V	-4 V	6 V	5 V
EPC EPC2007	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	6 A	Die	-40 C	125 °C	100 V		Die	2.8 nC	205 pF	2.5 V	-5 V	6 V	5 V
EPC EPC2014C	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	10 A	Die	-40 °C	150 °C	40 V	16 mOhm	Die		300 pF	2.5 V	-4 V	6 V	5 V	2.5 nC
EPC EPC2051	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	1.7 A	Die	-40 °C	150 °C	100 V	25 mOhm	Die	2.1 nC		2.5 V	-4 V	6 V	5 V		258 pF
EPC EPC2029	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	48 A	Die	-40 °C	150 °C	80 V	3.2 mOhm	Die	13 nC		2.5 V	-4 V	6 V	5 V		1410 pF
EPC EPC2018	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	12 A	Die	-40 C	125 °C	150 V	25 mOhm	Die	7.5 nC		2.5 V	-5 V	6 V	5 V		540 pF
EPC EPC2044	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	9.4 A	Die	-40 °C	150 °C	100 V		Die	5.5 nC	664 pF	2.5 V	-4 V	6 V	5 V			10.5 mOhm
EPC EPC2016	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	11 A	Die	-40 C	125 °C	100 V	16 mOhm	Die	5.2 nC		2.5 V	-5 V	6 V	5 V		520 pF
EPC EPC2021ENGR	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	60 A	Die	-40 °C	150 °C	80 V	2.5 mOhm	Die	15 nC	1700 pF	2.5 V	-4 V	6 V	5 V