EPC210 Series

Manufacturer: EPC

Catalog

GANFET 2N-CH 80V 9.5A/38A DIE

Part	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package [x]	Supplier Device Package [y]
EPC EPC2105	GaNFET (Gallium Nitride)	Die	2.5 nC 10 nC	2.5 V 2.5 V	300 pF 1100 pF	3.4 mOhm 14.5 mOhm	Die	2 N-Channel	80 V	-40 °C	150 °C	9.5 A 38 A	Surface Mount
EPC EPC2102ENGRT	GaNFET (Gallium Nitride)	Die	6.8 nC	2.5 V	830 pF	4.4 mOhm	Die	2 N-Channel	60 V	-40 °C	150 °C	23 A	Surface Mount
EPC EPC2106ENGRT	GaNFET (Gallium Nitride)	Die	0.73 nC	2.5 V	75 pF	70 mOhm	Die	2 N-Channel	100 V	-40 °C	150 °C	1.7 A	Surface Mount
EPC EPC2104	GaNFET (Gallium Nitride)	Die	7 nC	2.5 V		6.3 mOhm	Die	2 N-Channel	100 V	-40 °C	150 °C	23 A	Surface Mount	800 pF
EPC EPC2103ENGRT	GaNFET (Gallium Nitride)	Die		2.5 V		5.5 mOhm	Die	2 N-Channel	80 V			23 A	Surface Mount	7600 pF	6.5 nC
EPC EPC2107	GaNFET (Gallium Nitride)	9-VFBGA	0.044 nC 0.16 nC	2.5 V 2.5 V	7 pF 16 pF	3.3 Ohm 320 mOhm	9-BGA	3 N-Channel (Half Bridge + Synchronous Bootstrap)	100 V	-40 °C	150 °C	1.7 A	Surface Mount			500 mA	1.35	1.35
EPC EPC2105ENGRT	GaNFET (Gallium Nitride)	Die	2.5 nC	2.5 V		14.5 mOhm	Die	2 N-Channel	80 V	-40 °C	150 °C	9.5 A	Surface Mount	300 pF
EPC EPC2103	GaNFET (Gallium Nitride)	Die		2.5 V		5.5 mOhm	Die	2 N-Channel	80 V	-40 °C	150 °C	28 A	Surface Mount	760 pF	6.5 nC
EPC EPC2100ENGRT	GaNFET (Gallium Nitride)	Die	4.9 nC 19 nC	2.5 V 2.5 V	475 pF 1960 pF	2.1 mOhm 8.2 mOhm	Die	2 N-Channel	30 V	-40 °C	150 °C	10 A 40 A	Surface Mount
EPC EPC2104ENGRT	GaNFET (Gallium Nitride)	Die	7 nC	2.5 V		6.3 mOhm	Die	2 N-Channel	100 V	-40 °C	150 °C	23 A	Surface Mount	800 pF