EPC210 Series
Manufacturer: EPC
GANFET 2N-CH 80V 9.5A/38A DIE
| Part | Technology | Package / Case | Gate Charge (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Package Name | Channel Count | Configuration - Features | Configuration | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Typical) | Mounting Type | Current - Continuous Drain (Id) (Tj) | Current - Continuous Drain (Id) | Current - Continuous Drain (Id) (Maximum) | Package Width | Package Length | Current - Continuous Drain (Id) (Ta) (2) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC | GaNFET (Gallium Nitride) | Die | 2.5 nC | 2.5 V 2.5 V | 300 pF 1100 pF | 3.4 mOhm 14.5 mOhm | Die | 2 | Half Bridge | N-Channel | 80 V | -40 °C | 150 °C | 9.5 A | Surface Mount | |||||||
EPC | GaNFET (Gallium Nitride) | Die | 6.8 nC | 2.5 V | 830 pF | 4.4 mOhm | Die | 2 | Half Bridge | N-Channel | 60 V | -40 °C | 150 °C | Surface Mount | 23 A | |||||||
EPC | GaNFET (Gallium Nitride) | Die | 0.73 nC | 2.5 V | 75 pF | 70 mOhm | Die | 2 | Half Bridge | N-Channel | 100 V | -40 °C | 150 °C | Surface Mount | 1.7 A | |||||||
EPC | GaNFET (Gallium Nitride) | Die | 7 nC | 2.5 V | 800 pF | 6.3 mOhm | Die | 2 | Half Bridge | N-Channel | 100 V | -40 °C | 150 °C | Surface Mount | 23 A | |||||||
EPC | GaNFET (Gallium Nitride) | Die | 6.5 nC | 2.5 V | 5.5 mOhm | Die | 2 | Half Bridge | N-Channel | 80 V | Surface Mount | 23 A | ||||||||||
EPC | GaNFET (Gallium Nitride) | 9-VFBGA | 0.044 nC 0.16 nC | 2.5 V 2.5 V | 7 pF 16 pF | 3.3 Ohm 320 mOhm | 9-BGA | 3 | Half Bridge Synchronous Bootstrap | N-Channel | 100 V | -40 °C | 150 °C | 1.7 A | Surface Mount | 500 mA | 1.35 mm | 1.35 mm | ||||
EPC | GaNFET (Gallium Nitride) | Die | 2.5 nC | 2.5 V | 300 pF | 14.5 mOhm | Die | 2 | Half Bridge | N-Channel | 80 V | -40 °C | 150 °C | Surface Mount | 9.5 A | |||||||
EPC | GaNFET (Gallium Nitride) | Die | 6.5 nC | 2.5 V | 760 pF | 5.5 mOhm | Die | 2 | Half Bridge | N-Channel | 80 V | -40 °C | 150 °C | Surface Mount | 28 A | |||||||
EPC | GaNFET (Gallium Nitride) | Die | 4.9 nC 19 nC | 2.5 V 2.5 V | 475 pF 1960 pF | 2.1 mOhm 8.2 mOhm | Die | 2 | Half Bridge | N-Channel | 30 V | -40 °C | 150 °C | Surface Mount | 40 A | 10 A | ||||||
EPC | GaNFET (Gallium Nitride) | Die | 7 nC | 2.5 V | 800 pF | 6.3 mOhm | Die | 2 | Half Bridge | N-Channel | 100 V | -40 °C | 150 °C | Surface Mount | 23 A |