Analog Devices

The HMC631LP3 & HMC631LP3E are high dynamic range Vector Modulator RFICs which are targeted for RF predistortion and feed-forward cancellation circuits, as well as RF cancellation, beam forming and amplitude/phase correction circuits. The I & Q ports of the HMC631LP3(E) can be used to continuously vary the phase and amplitude of RF signals by up to 360 degrees and 40 dB respectively, while supporting a 3 dB modulation bandwidth of 200 MHz. With an output IP3 of +26 dBm and output noise floor of -160 dBm/Hz (at maximum gain setting), the IP3/noise floor ratio is 186 dB.APPLICATIONSCellular/3G & WiMAX SystemsWireless Infrastructure HPA & MCPA Error CorrectionPre-Distortion or Feed-Forward LinearizationBeam Forming & Nulling Circuits

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSPoint to Point/Multipoint RadioTest Equipment & Industrial ControlsSATCOMMilitary End-Use

The HMC633 is a GaAs MMIC PHEMT Driver Amplifier die which operates between 5 and 17 GHz. The amplifier provides up to 31 dB of gain, +30 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC633 is an ideal driver amplifier for microwave radio applications from 5 to 17 GHz, and may also be biased at +5V, 130 mA to provide 2 dB lower gain with improved PAE. The HMC633 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via one 1 mil wedge bond with minimal length of 0.31 mm (12 mils).ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATLO Driver for MixersMilitary & Space

The HMC634LC4 is a GaAs PHEMT MMIC Driver Amplifier in a leadless 4 x 4 mm ceramic surface mount package which operates between 5 and 20 GHz. The amplifier provides up to 21 dB of gain, +29 dBm Output IP3, and +22 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC634LC4 is an ideal driver amplifier for microwave radio applications from 5 to 20 GHz, and may be biased at +5V, 130 mA to provide lower gain with optimized PAE. The amplifier’s I/Os are DC blocked and matched to 50 Ohms with no external matching required.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATLO Driver for MixersMilitary & Space

The HMC635LC4 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 18.5 dB of gain, +27 dBm Output IP3, and +22 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635LC4 is capable of providing up to +23.5 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs).ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATMilitary & SpaceLO Driver for Mixers

The HMC636ST89(E) is a GaAs PHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components. The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness.ApplicationsCellular / PCS / 3GWiMAX, WiBro, & Fixed WirelessCATV & Cable ModemMicrowave Radio

The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order intercept (IP3) optimization. The amplifier operates from dc to 7.5 GHz, providing 15.5 dB of small signal gain, 28 dBm output power at 1 dB gain compression, a typical output IP3 of 39 dBm, and a 3.5 dB noise figure, while requiring 345 mA from a 12 V supply voltage (VDD). Gain flatness is excellent from dc to 7.5 GHz at ±0.5 dB typical, making the HMC637BPM5E ideal for military, space, and test equipment applications. The HMC637BPM5E also features inputs/outputs (I/Os) that are internally matched to 50 Ω, housed in a RoHS-compliant, 5 mm × 5 mm, premolded cavity, lead frame chip scale package (LFCSP), making the device compatible with high volume, surface-mount technology (SMT) assembly equipment.ApplicationsMilitary and spaceTest Instrumentation

The HMC6380LC4B is a wideband MMIC Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator’s monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +23V. The HMC6380LC4B VCO operates from a single +5V supply, consumes only 75 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.ApplicationsIndustrial/Medical EquipmentMeasurement EquipmentSatcomMilitary Radar, EW, & ECM

The HMC639ST89(E) is a GaAs PHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +22 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components. The internally matched topology permits this amplifier to be readily ported between virtually any printed circuit board material, regardless of its dielectric constant, thickness, or composition.ApplicationsCellular / PCS / 3GWiMAX, WiBro, & Fixed WirelessCATV & Cable ModemMicrowave RadioIF and RF Sections