HMC637ALP5E Series

GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier

Catalog

GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier

Part	P1dB	Supplier Device Package	Current - Supply	Package / Case	Mounting Type	RF Type	Noise Figure	Frequency [Max]	Gain	Voltage - Supply	Supplier Device Package [y]	Supplier Device Package [x]	Voltage - Supply [Min]	Voltage - Supply [Max]
Analog Devices HMC637	29 dBm	Die	400 mA	Die	Surface Mount	General Purpose	5 dB	6 GHz	14 dBi	12 VDC
Analog Devices HMC637A	29 dBm	Die	400 mA	Die	Surface Mount	VSAT	12 dB	6 GHz	13 dBi
Analog Devices HMC637BPM5ETR	28 dBm	32-LFCSP-CAV	345 mA	32-LFQFN Exposed Pad CSP	Surface Mount	General Purpose	3.5 dB	7.5 GHz	15.5 dBi		5	5	8 V	13 V
Analog Devices HMC637ALP5ETR	29 dBm	32-QFN (5x5)	400 mA	32-VFQFN Exposed Pad	Surface Mount	VSAT	5 dB	6 GHz	13 dBi	12 VDC

Catalog

GaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier

Key Features

• P1dB output power: 28 dBm typical

• Gain: 15.5 dB typical

• Output IP3: 39 dBm typical

• Self biased at VDD= 12 V at 345 mA typicalOptional bias control on VGG1for IDQadjustmentOptional bias control on VGG2for IP2 and IP3 optimization

• Optional bias control on VGG1for IDQadjustment

• Optional bias control on VGG2for IP2 and IP3 optimization

• 50 Ω matched input/output

• 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2

Description

The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order intercept (IP3) optimization. The amplifier operates from dc to 7.5 GHz, providing 15.5 dB of small signal gain, 28 dBm output power at 1 dB gain compression, a typical output IP3 of 39 dBm, and a 3.5 dB noise figure, while requiring 345 mA from a 12 V supply voltage (VDD). Gain flatness is excellent from dc to 7.5 GHz at ±0.5 dB typical, making the HMC637BPM5E ideal for military, space, and test equipment applications. The HMC637BPM5E also features inputs/outputs (I/Os) that are internally matched to 50 Ω, housed in a RoHS-compliant, 5 mm × 5 mm, premolded cavity, lead frame chip scale package (LFCSP), making the device compatible with high volume, surface-mount technology (SMT) assembly equipment.ApplicationsMilitary and spaceTest Instrumentation