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Discrete Semiconductor Products

APTM120A29FTG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 1200V, 0.348OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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Discrete Semiconductor Products

APTM120A29FTG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 1200V, 0.348OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM120A29FTG
Configuration2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)1200 V
Drain to Source Voltage (Vdss)1.2 kV
Gate Charge (Qg) (Max) @ Vgs374 nC
Input Capacitance (Ciss) (Max) @ Vds10300 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP4
Power - Max [Max]780 W
Rds On (Max) @ Id, Vgs348 mOhm
Supplier Device PackageSP4
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 6$ 207.31
Microchip DirectN/A 1$ 207.31
50$ 171.77
100$ 154.00
250$ 148.08
500$ 130.31
1000$ 118.46
5000$ 104.25
NewarkEach 5$ 142.15
50$ 137.41
100$ 132.68
250$ 132.68
500$ 132.68

Description

General part information

APTM120H140FT1G-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance