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APTM120H140FT1G
Discrete Semiconductor Products

APTM120H140FT1G

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 1200V, 1.68OHM, 4-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, ROHS COMPLIANT, SP1, 12 PIN

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APTM120H140FT1G
Discrete Semiconductor Products

APTM120H140FT1G

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 1200V, 1.68OHM, 4-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, ROHS COMPLIANT, SP1, 12 PIN

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM120H140FT1G
Configuration4 N-Channel
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)1200 V
Drain to Source Voltage (Vdss)1.2 kV
Gate Charge (Qg) (Max) @ Vgs145 nC
Input Capacitance (Ciss) (Max) @ Vds3812 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP1
Power - Max [Max]208 W
Rds On (Max) @ Id, Vgs [Max]1.68 Ohm
Supplier Device PackageSP1
TechnologyMOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 14$ 77.35
Microchip DirectN/A 1$ 77.35
50$ 64.45
100$ 56.72
250$ 55.17
500$ 53.63
1000$ 51.56
5000$ 48.47

Description

General part information

APTM120H140FT1G-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance