APTM120H140FT1G-Module Series

1200V/Single switch + series and parallel diode/Si MOSFET

Catalog

1200V/Single switch + series and parallel diode/Si MOSFET

Part	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Configuration	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)
Microchip Technology APTM120A20DG	SP6	240 mOhm	Chassis Mount	5 V	50 A	150 °C	-40 °C	1250 W	MOSFET (Metal Oxide)	SP6	1200 V	1.2 kV	15200 pF	600 nC	2 N-Channel (Half Bridge)
Microchip Technology APTM120H140FT1G	SP1		Chassis Mount		8 A	150 °C	-40 °C	208 W	MOSFET (Metal Oxide)	SP1	1200 V	1.2 kV	3812 pF			145 nC	4 N-Channel	1.68 Ohm
Microchip Technology APTM120A15FG	SP6	175 mOhm	Chassis Mount	5 V	60 A	150 °C	-40 °C	1250 W	MOSFET (Metal Oxide)	SP6	1200 V	1.2 kV			2 N-Channel (Half Bridge)	748 nC
Microchip Technology APTM120U10SAG	SP6	120 mOhm	Chassis Mount	5 V	116 A	150 °C	-40 °C		MOSFET (Metal Oxide)	SP6	1200 V		28900 pF	1100 nC					N-Channel	30 V	3290 W	10 V
Microchip Technology APTM120U10SCAVG	SP6	120 mOhm	Chassis Mount	5 V	116 A	150 °C	-40 °C		MOSFET (Metal Oxide)	SP6	1200 V		28900 pF	1100 nC					N-Channel	30 V	3290 W	10 V
Microchip Technology APTM120H29FG	SP6	348 mOhm	Chassis Mount		34 A	150 °C	-40 °C	780 W	MOSFET (Metal Oxide)	SP6	1200 V	1.2 kV	10300 pF			374 nC	4 N-Channel						5 V
Microchip Technology APTM120UM70DAG	SP6	80 mOhm	Chassis Mount	5 V	171 A	150 °C	-40 °C		MOSFET (Metal Oxide)	SP6	1200 V		43500 pF	1650 nC					N-Channel	30 V	5000 W	10 V
Microchip Technology APTM120DA30T1G	SP1	360 mOhm	Chassis Mount	5 V	31 A	150 °C	-40 °C		MOSFET (Metal Oxide)	SP1	1200 V		14560 pF			560 nC			N-Channel	30 V		10 V		657 W
Microchip Technology APTM120A29FTG	SP4	348 mOhm	Chassis Mount		34 A	150 °C	-40 °C	780 W	MOSFET (Metal Oxide)	SP4	1200 V	1.2 kV	10300 pF		2 N-Channel (Half Bridge)	374 nC							5 V
Microchip Technology APTM120DA30CT1G	SP1	360 mOhm	Chassis Mount	5 V	31 A	150 °C	-40 °C		MOSFET (Metal Oxide)	SP1	1200 V		14560 pF			560 nC			N-Channel	30 V		10 V		657 W

Catalog

1200V/Single switch + series and parallel diode/Si MOSFET

Key Features

- Configuration: Single switch + series FRED and SIC parallel diode

- VDSS (V): 1200

- RDSon (mR) typ: 100

- Current (A) Tc=80C: 86

- Silicon type: MOS 7/SiC Diode

- Package: SP6C

Description

* FREDFETs * Low RDSon * Low input and Miller capacitance * Low gate charge * Fast intrinsic reverse diode * Avalanche energy rated * Very rugged * Kelvin source for easy drive * Low stray inductance * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Internal thermistor for temperature monitoring (optional) * Low junction to case thermal resistance * RoHS Compliant