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APTM120U10SCAVG
Discrete Semiconductor Products

APTM120U10SCAVG

Active
Microchip Technology

1200V/SINGLE SWITCH + SERIES FRED AND SIC PARALLEL

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Search across all available documentation for this part.

Documents35 kW Active Rectifier with Integrated PMMOSFET Tutorial+2
APTM120U10SCAVG
Discrete Semiconductor Products

APTM120U10SCAVG

Active
Microchip Technology

1200V/SINGLE SWITCH + SERIES FRED AND SIC PARALLEL

Deep-Dive with AI

Documents35 kW Active Rectifier with Integrated PMMOSFET Tutorial+2

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM120U10SCAVG
Current - Continuous Drain (Id) @ 25°C116 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1100 nC
Input Capacitance (Ciss) (Max) @ Vds28900 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP6
Power Dissipation (Max) [Max]3290 W
Rds On (Max) @ Id, Vgs120 mOhm
Supplier Device PackageSP6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

APTM120H140FT1G-Module Series

1200V/Single switch + series and parallel diode/Si MOSFET

PartPackage / CaseRds On (Max) @ Id, VgsMounting TypeVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°COperating Temperature [Max]Operating Temperature [Min]Power - Max [Max]TechnologySupplier Device PackageDrain to Source Voltage (Vdss)Drain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ Vgs [Max]ConfigurationGate Charge (Qg) (Max) @ VgsConfigurationRds On (Max) @ Id, Vgs [Max]FET TypeVgs (Max)Power Dissipation (Max) [Max]Drive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ Id [Max]Power Dissipation (Max)
Microchip Technology
APTM120A20DG
SP6
240 mOhm
Chassis Mount
5 V
50 A
150 °C
-40 °C
1250 W
MOSFET (Metal Oxide)
SP6
1200 V
1.2 kV
15200 pF
600 nC
2 N-Channel (Half Bridge)
APTM120H140FT1G
Microchip Technology
APTM120H140FT1G
SP1
Chassis Mount
8 A
150 °C
-40 °C
208 W
MOSFET (Metal Oxide)
SP1
1200 V
1.2 kV
3812 pF
145 nC
4 N-Channel
1.68 Ohm
Microchip Technology
APTM120A15FG
SP6
175 mOhm
Chassis Mount
5 V
60 A
150 °C
-40 °C
1250 W
MOSFET (Metal Oxide)
SP6
1200 V
1.2 kV
2 N-Channel (Half Bridge)
748 nC
APTM120U10SAG
Microchip Technology
APTM120U10SAG
SP6
120 mOhm
Chassis Mount
5 V
116 A
150 °C
-40 °C
MOSFET (Metal Oxide)
SP6
1200 V
28900 pF
1100 nC
N-Channel
30 V
3290 W
10 V
APTM120U10SCAVG
Microchip Technology
APTM120U10SCAVG
SP6
120 mOhm
Chassis Mount
5 V
116 A
150 °C
-40 °C
MOSFET (Metal Oxide)
SP6
1200 V
28900 pF
1100 nC
N-Channel
30 V
3290 W
10 V
APTM120H29FG
Microchip Technology
APTM120H29FG
SP6
348 mOhm
Chassis Mount
34 A
150 °C
-40 °C
780 W
MOSFET (Metal Oxide)
SP6
1200 V
1.2 kV
10300 pF
374 nC
4 N-Channel
5 V
Microchip Technology
APTM120UM70DAG
SP6
80 mOhm
Chassis Mount
5 V
171 A
150 °C
-40 °C
MOSFET (Metal Oxide)
SP6
1200 V
43500 pF
1650 nC
N-Channel
30 V
5000 W
10 V
Microchip Technology
APTM120DA30T1G
SP1
360 mOhm
Chassis Mount
5 V
31 A
150 °C
-40 °C
MOSFET (Metal Oxide)
SP1
1200 V
14560 pF
560 nC
N-Channel
30 V
10 V
657 W
Microchip Technology
APTM120A29FTG
SP4
348 mOhm
Chassis Mount
34 A
150 °C
-40 °C
780 W
MOSFET (Metal Oxide)
SP4
1200 V
1.2 kV
10300 pF
2 N-Channel (Half Bridge)
374 nC
5 V
APTM120DA30CT1G
Microchip Technology
APTM120DA30CT1G
SP1
360 mOhm
Chassis Mount
5 V
31 A
150 °C
-40 °C
MOSFET (Metal Oxide)
SP1
1200 V
14560 pF
560 nC
N-Channel
30 V
10 V
657 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3$ 417.53
Microchip DirectN/A 1$ 417.53
50$ 345.95
100$ 310.16
250$ 298.24
500$ 262.43
1000$ 238.58
5000$ 209.94

Description

General part information

APTM120H140FT1G-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance